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Tokmas CI19N120SM

Manufacturer Part #:

CI19N120SM

Manufacturer:

Tokmas

Package/Case:

TO-247-3

Datasheet:

CI19N120SM

Description:

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Tokmas
Package/Case	TO-247-3
Continuous Drain Current	19A
Gate - Source Threshold Voltage	2.5V
Encapsulated Type	Single Tube
Power Dissipation	125W
Operating Temperature	-55℃~+175℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	50nC
Drain - Source Breakdown Voltage	1200V
Input Capacitance	950pF
Reverse Transfer Capacitance	36pF
RDS(on)	165mΩ@20V

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