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Tokmas CI60N120SM4

Manufacturer Part #:

CI60N120SM4

Manufacturer:

Tokmas

Package/Case:

TO-247-4L

Datasheet:

CI60N120SM4

Description:

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Tokmas
Package/Case	TO-247-4L
Continuous Drain Current	60A
Gate - Source Threshold Voltage	2.5V
Encapsulated Type	Single Tube
Power Dissipation	330W
Operating Temperature	-55℃~+175℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	160nC
Drain - Source Breakdown Voltage	1200V
Input Capacitance	3550pF
Reverse Transfer Capacitance	29pF
RDS(on)	45mΩ@20V

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