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Wuxi China Resources Huajing Microelectronics CS4N65A3HD1-G
Manufacturer Part #:
CS4N65A3HD1-G
Manufacturer:
Package/Case:
TO-251
Datasheet:
Description:
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single FETs, MOSFETs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Package/Case | TO-251 | |
| Drain to Source Voltage | 650V | |
| Operating Temperature - | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| RDS(on) | 2Ω@10V | |
| Gate Charge(Qg) | 14.5nC@10V | |
| Ciss-Input Capacitance | 544pF | |
| Pd - Power Dissipation | 75W |
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ISO 9001:2015
ISO 14001:2015