GOFORD 18N10

Type	Description	Select
Category	MOSFETs
Manufacturer	GOFORD
Package/Case	TO-252-2
Operating Temperature	-55℃~+150℃
Input Capacitance(Ciss@Vds)	1.318nF
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	3V
Gate Charge(Qg)	28nC@10V
Current - Continuous Drain(Id)	25A
Reverse Transfer Capacitance (Crss@Vds)	20pF@50V
Drain to Source Voltage	100V
Pd - Power Dissipation	62.5W
RDS(on)	63mΩ@4.5V,8A

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