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Cmos CMD5B65D
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single IGBTs | |
| Manufacturer | Cmos | |
| Package/Case | TO-252 | |
| Pd - Power Dissipation | 65W | |
| Td(off) | 84ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Td(on) | 20ns | |
| Reverse Transfer Capacitance (Cres) | 6pF | |
| Pulsed Current- Forward(Ifm) | 9A | |
| Reverse Recovery Time(trr) | 195ns | |
| Output Capacitance(Coes) | 40pF | |
| Input Capacitance(Cies) | 260pF | |
| Switching Energy(Eoff) | 84mJ | |
| Turn-On Energy (Eon) | 195mJ | |
| Gate Charge(Qg) | 12.5nC@15V | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@500uA |
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Certifications:
ISO 9001:2015
ISO 14001:2015