Bruckewell CMS120N080B

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Bruckewell
Package/Case	TO-263-7
Continuous Drain Current	35A
Gate - Source Threshold Voltage	4V
Encapsulated Type	-
Power Dissipation	188W
Configuration	-
FET Type	1 N-channel
Total Gate Charge	61nC
Drain - Source Breakdown Voltage	1200V
RDS(on)	77mΩ@20V

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