GOFORD GT10N10

Type	Description	Select
Category	MOSFETs
Manufacturer	GOFORD
Package/Case	TO-252-2
Operating Temperature	-55℃~+150℃@(Tj)
Input Capacitance(Ciss@Vds)	206pF@50V
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	1.5V
Gate Charge(Qg)	4.3nC@10V
Current - Continuous Drain(Id)	7A
Reverse Transfer Capacitance (Crss@Vds)	1.4pF@50V
Drain to Source Voltage	100V
Pd - Power Dissipation	17W
RDS(on)	115mΩ

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