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Huixin H18N20D
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single FETs, MOSFETs | |
| Manufacturer | Huixin | |
| Package/Case | TO-252 | |
| Drain to Source Voltage | 200V | |
| Operating Temperature - | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 18A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Output Capacitance(Coss) | 22pF | |
| RDS(on) | 95mΩ@10V | |
| Gate Charge(Qg) | 9.8nC@10V | |
| Ciss-Input Capacitance | 491pF | |
| Pd - Power Dissipation | 83W |
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