R+O HB10P680S

Type	Description	Select
Category	Single FETs, MOSFETs
Manufacturer	R+O
Package/Case	TO-252
Drain to Source Voltage	100V
Operating Temperature -	-55℃~+150℃
Current - Continuous Drain(Id)	30A
Gate Threshold Voltage (Vgs(th))	2.1V
Reverse Transfer Capacitance (Crss@Vds)	183pF
Number	1 P-Channel
RDS(on)	54mΩ@10V
Gate Charge(Qg)	116.8nC@10V
Ciss-Input Capacitance	6.303nF
Pd - Power Dissipation	125W

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