High Diode HD2312

Type	Description	Select
Category	MOSFETs
Manufacturer	High Diode
Package/Case	SOT-23
Operating Temperature	-50℃~+150℃
Input Capacitance(Ciss@Vds)	865pF@10V
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	450mV
Gate Charge(Qg)	-
Current - Continuous Drain(Id)	5A
Reverse Transfer Capacitance (Crss@Vds)	55pF@10V
Drain to Source Voltage	20V
Pd - Power Dissipation	350mW
RDS(on)	18mΩ@4.5V,5A

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Supply Information

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2. Authorized Distributor: Directly sourced from original manufacturers or their authorized distributors.
3. OEM & EMS: Excess inventory from OEM and EMS production lines.
4. Qualified Supplier: Supplied by vetted independent suppliers who meet our quality and traceability standards.

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Delivery Time

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