HUASHUO HSCC8204

Type	Description	Select
Category	MOSFETs
Manufacturer	HUASHUO
Package/Case	DFN-6-EP(3x2)
Operating Temperature	-55℃~+150℃
Input Capacitance(Ciss@Vds)	1647pF@10V
Type	2 N-Channel
Gate Threshold Voltage (Vgs(th)@Id)	450mV
Gate Charge(Qg)	22nC@4.5V
Current - Continuous Drain(Id)	9.5A
Reverse Transfer Capacitance (Crss@Vds)	148pF@10V
Drain to Source Voltage	20V
Pd - Power Dissipation	1.56W
RDS(on)	6.7mΩ@3.7V,5A

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