HUAYI HYG011N04LS1C2

Type	Description	Select
Category	MOSFETs
Manufacturer	HUAYI
Package/Case	DFN-8(5.2x5.9)
Operating Temperature	-55℃~+175℃
Input Capacitance(Ciss@Vds)	5876pF
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	1V
Gate Charge(Qg)	89nC@10V
Current - Continuous Drain(Id)	165A
Reverse Transfer Capacitance (Crss@Vds)	58pF@25V
Drain to Source Voltage	40V
Pd - Power Dissipation	75W
RDS(on)	1.1mΩ@10V,40A

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