HUAYI HYG023N04NR1D

Type	Description	Select
Category	MOSFETs
Manufacturer	HUAYI
Package/Case	TO-252-2
Operating Temperature	-55℃~+175℃
Input Capacitance(Ciss@Vds)	3412pF
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	2.8V
Gate Charge(Qg)	82nC@10V
Current - Continuous Drain(Id)	140A
Reverse Transfer Capacitance (Crss@Vds)	485pF
Drain to Source Voltage	45V
Pd - Power Dissipation	100W
RDS(on)	2.3mΩ@10V,40A

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