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JIAENSEMI JNG10T65DJS1
Manufacturer Part #:
JNG10T65DJS1
Manufacturer:
Package/Case:
TO-252-2L
Datasheet:
-
Description:
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single IGBTs | |
| Manufacturer | JIAENSEMI | |
| Package/Case | TO-252-2L | |
| Pd - Power Dissipation | 100W | |
| Td(off) | 71ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Td(on) | 12ns | |
| Reverse Transfer Capacitance (Cres) | 10pF | |
| Pulsed Current- Forward(Ifm) | 30A | |
| Reverse Recovery Time(trr) | 57ns | |
| Output Capacitance(Coes) | 37pF | |
| Input Capacitance(Cies) | 670pF | |
| Switching Energy(Eoff) | 170uJ | |
| Operating Temperature | -40℃~+175℃ | |
| Turn-On Energy (Eon) | 180uJ | |
| Gate Charge(Qg) | 28nC@15V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@250uA |
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