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JIAENSEMI JNG50T65HJU1
Manufacturer Part #:
JNG50T65HJU1
Manufacturer:
Package/Case:
TO-247
Datasheet:
-
Description:
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single IGBTs | |
| Manufacturer | JIAENSEMI | |
| Package/Case | TO-247 | |
| Pd - Power Dissipation | 535W | |
| Td(off) | 193ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Td(on) | 52ns | |
| Reverse Transfer Capacitance (Cres) | 37pF | |
| Pulsed Current- Forward(Ifm) | 200A | |
| Reverse Recovery Time(trr) | 82ns | |
| Output Capacitance(Coes) | 170pF | |
| Input Capacitance(Cies) | 4.82nF | |
| Switching Energy(Eoff) | 1mJ | |
| Operating Temperature | -40℃~+175℃ | |
| Turn-On Energy (Eon) | 1.7mJ | |
| Gate Charge(Qg) | 158nC@15V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@1mA |
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