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Wuxi NCE Power Semiconductor NCE40H12I

Manufacturer Part #:

NCE40H12I

Manufacturer:

Wuxi NCE Power Semiconductor

Package/Case:

TO-251

Datasheet:

NCE40H12I

Description:

40V 120A 3.6mΩ@10V,20A 120W 1.8V 1 N-channel TO-251 MOSFETs ROHS

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Specifications

Product Details

Type	Description	Select
Category	MOSFETs
Manufacturer	Wuxi NCE Power Semiconductor
Package/Case	TO-251
Operating Temperature	-55℃~+175℃@(Tj)
Input Capacitance(Ciss@Vds)	5.4nF@20V
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	1.8V
Gate Charge(Qg)	75nC@10V
Current - Continuous Drain(Id)	120A
Reverse Transfer Capacitance (Crss@Vds)	380pF@20V
Drain to Source Voltage	40V
Pd - Power Dissipation	120W
RDS(on)	3.6mΩ@10V,20A

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