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SCILICON ELECTRIC SFB096N200I3

Manufacturer Part #:

SFB096N200I3

Manufacturer:

SCILICON ELECTRIC

Package/Case:

TO-263

Datasheet:

SFB096N200I3

Description:

200V 100A 20W 8.7mΩ@10V,50A 4V 1 N-channel TO-263 MOSFETs ROHS

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Specifications

Product Details

Type	Description	Select
Category	MOSFETs
Manufacturer	SCILICON ELECTRIC
Package/Case	TO-263
Operating Temperature	-55℃~+150℃
Input Capacitance(Ciss@Vds)	5350pF@100V
Type	1 N-channel
Configuration	-
Gate Threshold Voltage (Vgs(th)@Id)	4V
Gate Charge(Qg)	69nC@10V
Current - Continuous Drain(Id)	100A
Reverse Transfer Capacitance (Crss@Vds)	42pF@100V
Drain to Source Voltage	200V
Pd - Power Dissipation	20W
RDS(on)	8.7mΩ@10V,50A

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