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Hangzhou Silan Microelectronics SGM40HF12A1TFD

Manufacturer Part #:

SGM40HF12A1TFD

Manufacturer:

Hangzhou Silan Microelectronics

Package/Case:

Datasheet:

SGM40HF12A1TFD

Description:

40A 1.2kV IGBT module IGBT Transistors / Modules ROHS

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Specifications

Product Details

Type	Description	Select
Category	IGBT Transistors / Modules
Manufacturer	Hangzhou Silan Microelectronics
Package/Case	-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.5V@250uA
Operating Temperature	-40℃~+150℃@(Tj)
Input Capacitance(Cies)	6.58nF@25V
Td(off)	611ns
Gate Charge(Qg)	413nC@40A,±15V
Switching Energy(Eoff)	2.2mJ
Turn-On Energy (Eon)	9.3mJ
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Recovery Time(trr)	117ns
Current - Collector(Ic)	40A
Vce Saturation(VCE(sat))	2.6V@20A,15V
Pd - Power Dissipation	-
Td(on)	425ns
IGBT Type	IGBT module
Voltage - Forward(Vf)	2.6V@40A

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