NITRIDE YHJ-65P150AMC

Type	Description	Select
Category	GaN Transistors(GaN HEMT)
Manufacturer	NITRIDE
Package/Case	DFN-8(8x8)
Continuous Drain Current	12A
Gate - Source Threshold Voltage	-
Power Dissipation	-
Operating Temperature	-
Technology	-
Total Gate Charge	10nC
Output Capacitance	-
Drain - Source Breakdown Voltage	650V
Transistor Polarity	-
Input Capacitance	-
Reverse Transfer Capacitance	-
RDS(on)	150mΩ@10V

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Supply Information

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