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Bestirpower BCZ120N40M1

Manufacturer Part #:

BCZ120N40M1

Manufacturer:

Bestirpower

Package/Case:

TO-247-4L

Datasheet:

BCZ120N40M1

Description:

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Bestirpower
Package/Case	TO-247-4L
Operating Temperature	-55℃~+175℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	109nC
Output Capacitance	125pF
Reverse Transfer Capacitance	5pF
RDS(on)	-
Continuous Drain Current	60A
Gate - Source Threshold Voltage	3V
Encapsulated Type	Single Tube
Power Dissipation	375W
Drain - Source Breakdown Voltage	1200V
Input Capacitance	1960pF

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