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Bestirpower BCZ65N45M1

Manufacturer Part #:

BCZ65N45M1

Manufacturer:

Bestirpower

Package/Case:

TO-247-4L

Datasheet:

BCZ65N45M1

Description:

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Bestirpower
Package/Case	TO-247-4L
Operating Temperature	-55℃~+175℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	56nC
Output Capacitance	131pF
Reverse Transfer Capacitance	9.1pF
RDS(on)	-
Continuous Drain Current	42A
Gate - Source Threshold Voltage	2.8V
Encapsulated Type	Single Tube
Power Dissipation	150W
Drain - Source Breakdown Voltage	650V
Input Capacitance	1048pF

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