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SUPSiC GC2M0280120D

Manufacturer Part #:

GC2M0280120D

Manufacturer:

SUPSiC

Package/Case:

TO247-3

Datasheet:

GC2M0280120D

Description:

TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	SUPSiC
Package/Case	TO247-3
Operating Temperature	-55℃~+150℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	19nC
Output Capacitance	31pF
Reverse Transfer Capacitance	4pF
RDS(on)	320mΩ@20V
Continuous Drain Current	11A
Gate - Source Threshold Voltage	3.1V
Encapsulated Type	Single Tube
Power Dissipation	69.4W
Drain - Source Breakdown Voltage	1200V
Input Capacitance	267pF

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