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SUPSiC GC2M1000170D

Manufacturer Part #:

GC2M1000170D

Manufacturer:

SUPSiC

Package/Case:

TO247-3

Datasheet:

GC2M1000170D

Description:

TO247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	SUPSiC
Package/Case	TO247-3
Continuous Drain Current	5A
Gate - Source Threshold Voltage	2.8V
Encapsulated Type	Single Tube
Power Dissipation	69W
Operating Temperature	-55℃~+150℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	22nC
Drain - Source Breakdown Voltage	1700V
Input Capacitance	215pF
Reverse Transfer Capacitance	2.2pF
RDS(on)	0.8Ω@20V

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