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SUPSiC GC3M0040120K

Manufacturer Part #:

GC3M0040120K

Manufacturer:

SUPSiC

Package/Case:

TO-247-4

Datasheet:

GC3M0040120K

Description:

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	SUPSiC
Package/Case	TO-247-4
Operating Temperature	-40℃~+175℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	164nC
Output Capacitance	103pF
Reverse Transfer Capacitance	5pF
RDS(on)	40mΩ@15V
Continuous Drain Current	66A
Gate - Source Threshold Voltage	2.7V
Encapsulated Type	Single Tube
Power Dissipation	326W
Drain - Source Breakdown Voltage	1200V
Input Capacitance	2900pF

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