High Diode HD2301

Type	Description	Select
Category	MOSFETs
Manufacturer	High Diode
Package/Case	SOT-23
Operating Temperature	-
Input Capacitance(Ciss@Vds)	405pF@10V
Type	1 piece P-channel
Gate Threshold Voltage (Vgs(th)@Id)	400mV
Gate Charge(Qg)	12nC@2.5V
Current - Continuous Drain(Id)	2.3A
Reverse Transfer Capacitance (Crss@Vds)	55pF@10V
Drain to Source Voltage	20V
Pd - Power Dissipation	350mW
RDS(on)	140mΩ@2.5V,2A

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