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Sichainsemi S1M075120H1

Manufacturer Part #:

S1M075120H1

Manufacturer:

Sichainsemi

Package/Case:

TO-247-4L

Datasheet:

S1M075120H1

Description:

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Sichainsemi
Package/Case	TO-247-4L
Continuous Drain Current	38A
Gate - Source Threshold Voltage	2.8V
Power Dissipation	214W
Operating Temperature	-55℃~+175℃
FET Type	1 N-channel
Total Gate Charge	40nC
Drain - Source Breakdown Voltage	1200V
Input Capacitance	920pF
Reverse Transfer Capacitance	3.9pF
RDS(on)	70mΩ@18V

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