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Sichainsemi SG1M160120J

Manufacturer Part #:

SG1M160120J

Manufacturer:

Sichainsemi

Package/Case:

TO-263-7L

Datasheet:

SG1M160120J

Description:

TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Sichainsemi
Package/Case	TO-263-7L
Continuous Drain Current	21A
Gate - Source Threshold Voltage	2.8V
Power Dissipation	120W
Operating Temperature	-55℃~+175℃
FET Type	1 N-channel
Total Gate Charge	25.4nC
Drain - Source Breakdown Voltage	1200V
Input Capacitance	617pF
Reverse Transfer Capacitance	1.4pF
RDS(on)	160mΩ@15V

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