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Hangzhou Silan Microelectronics SVD640T

Manufacturer Part #:

SVD640T

Manufacturer:

Hangzhou Silan Microelectronics

Package/Case:

TO-220

Datasheet:

SVD640T

Description:

200V 18A 0.12Ω@10V,9A 150W 2V 1 N-channel TO-220 MOSFETs ROHS

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Specifications

Product Details

Type	Description	Select
Category	MOSFETs
Manufacturer	Hangzhou Silan Microelectronics
Package/Case	TO-220
Operating Temperature	-65℃~+150℃
Input Capacitance(Ciss@Vds)	1.108nF@25V
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	2V
Gate Charge(Qg)	41nC@10V
Current - Continuous Drain(Id)	18A
Reverse Transfer Capacitance (Crss@Vds)	34pF@25V
Drain to Source Voltage	200V
Pd - Power Dissipation	150W
RDS(on)	0.12Ω@10V,9A

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