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Hangzhou Silan Microelectronics SVF4N65M

Manufacturer Part #:

SVF4N65M

Manufacturer:

Hangzhou Silan Microelectronics

Package/Case:

TO-251D-3

Datasheet:

SVF4N65M

Description:

650V 4A 2.3Ω@10V,2A 77W 2V 1 N-channel TO-251D-3 MOSFETs ROHS

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Specifications

Product Details

Type	Description	Select
Category	MOSFETs
Manufacturer	Hangzhou Silan Microelectronics
Package/Case	TO-251D-3
Operating Temperature	-55℃~+150℃
Input Capacitance(Ciss@Vds)	-
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	2V
Gate Charge(Qg)	11.94nC@520V
Current - Continuous Drain(Id)	4A
Reverse Transfer Capacitance (Crss@Vds)	2.46pF@25V
Drain to Source Voltage	650V
Pd - Power Dissipation	77W
RDS(on)	2.3Ω@10V,2A

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