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Sichainsemi SG2M020170HJ

Manufacturer Part #:

SG2M020170HJ

Manufacturer:

Sichainsemi

Package/Case:

TO-247-4L

Datasheet:

SG2M020170HJ

Description:

TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Sichainsemi
Package/Case	TO-247-4L
Continuous Drain Current	110A
Gate - Source Threshold Voltage	3.1V
Encapsulated Type	TO-247-4L
Power Dissipation	535W
Operating Temperature	-55℃~+175℃
FET Type	1 N-channel
Total Gate Charge	209nC
Drain - Source Breakdown Voltage	1700V
Input Capacitance	5265pF
Reverse Transfer Capacitance	7.5pF

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