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Sichainsemi SG2M040120JJ

Manufacturer Part #:

SG2M040120JJ

Manufacturer:

Sichainsemi

Package/Case:

TO-263-7L

Datasheet:

SG2M040120JJ

Description:

TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	Sichainsemi
Package/Case	TO-263-7L
Continuous Drain Current	75A
Gate - Source Threshold Voltage	2.8V
Encapsulated Type	TO-263-7L
Power Dissipation	366W
Operating Temperature	-55℃~+175℃
FET Type	1 N-channel
Total Gate Charge	60nC
Drain - Source Breakdown Voltage	1200V
Input Capacitance	1820pF
Reverse Transfer Capacitance	4.5pF

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