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Hangzhou Silan Microelectronics SVF12N65F(S)

Manufacturer Part #:

SVF12N65F(S)

Manufacturer:

Hangzhou Silan Microelectronics

Package/Case:

TO-220F-3

Datasheet:

SVF12N65F(S)

Description:

650V 12A 0.64Ω@10V,6A 210W 4V 1 N-channel TO-220F-3 MOSFETs ROHS

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Specifications

Product Details

Type	Description	Select
Category	MOSFETs
Manufacturer	Hangzhou Silan Microelectronics
Package/Case	TO-220F-3
Operating Temperature	-55℃~+150℃
Input Capacitance(Ciss@Vds)	1.39nF@25V
Type	1 N-channel
Gate Threshold Voltage (Vgs(th)@Id)	4V
Gate Charge(Qg)	33nC@520V
Current - Continuous Drain(Id)	12A
Reverse Transfer Capacitance (Crss@Vds)	15pF@25V
Drain to Source Voltage	650V
Pd - Power Dissipation	210W
RDS(on)	0.64Ω@10V,6A

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