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SUPSiC GC2M0160120D

Manufacturer Part #:

GC2M0160120D

Manufacturer:

SUPSiC

Package/Case:

TO-247-3

Datasheet:

GC2M0160120D

Description:

TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	SUPSiC
Package/Case	TO-247-3
Continuous Drain Current	18A
Gate - Source Threshold Voltage	2.9V
Encapsulated Type	Single Tube
Power Dissipation	125W
Operating Temperature	-
Configuration	-
FET Type	1 N-channel
Total Gate Charge	40nC
Drain - Source Breakdown Voltage	1200V
Input Capacitance	606pF
Reverse Transfer Capacitance	5pF
RDS(on)	160mΩ@20V

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