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SUPSiC GC3M0060065K

Manufacturer Part #:

GC3M0060065K

Manufacturer:

SUPSiC

Package/Case:

TO-247-4

Datasheet:

GC3M0060065K

Description:

TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS

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Specifications

Product Details

Type	Description	Select
Category	Silicon Carbide Field Effect Transistor (MOSFET)
Manufacturer	SUPSiC
Package/Case	TO-247-4
Operating Temperature	-40℃~+175℃
Configuration	-
FET Type	1 N-channel
Total Gate Charge	46nC
Output Capacitance	80pF
Reverse Transfer Capacitance	9pF
RDS(on)	60mΩ@15V
Continuous Drain Current	37A
Gate - Source Threshold Voltage	2.3V
Encapsulated Type	Single Tube
Power Dissipation	150W
Drain - Source Breakdown Voltage	650V
Input Capacitance	1020pF

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